Aluminum alloy thin film and wiring circuit having the thin film and target material for forming the tin film

摘要

The present invention intends to provide an aluminum alloy thin film that has an electrode potential of the same level as the electrode potential of an ITO film, does not diffuse silicon, has a low resistivity, and excels in heat resistance. The present invention is characterized in an aluminum alloy thin film containing 0.5 to 7.0 at % at least one or more element among nickel, cobalt, and iron, 0.1 to 3.0 at % carbon, and the balance being aluminum. Furthermore, the aluminum alloy thin film further contains 0.5 to 2.0 at % silicon.