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Read only data bus and write only data bus forming in different layer metals
Read only data bus and write only data bus forming in different layer metals
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机译:只读数据总线和只写在不同层金属中形成的数据总线
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摘要
A semiconductor memory device that enables data buses to operate at high speed by reducing wiring capacitance and interference noise between data bus lines is provided. A semiconductor memory device includes a read-only data bus which is formed in a first metal layer and has plural pairs of read lines precharged to an arbitrary voltage and two lines in a pair transmitting complementary read signals. A write-only data bus, which is positioned in parallel with the read-only data bus, is formed in a second metal layer different from the first metal layer and has plural pairs of write lines precharged to an arbitrary voltage, and two lines in a pair transmitting complementary write signals.
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