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Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried source line and floating gate, and a memory array made thereby
Self-aligned method of forming a semiconductor memory array of floating gate memory cells with buried source line and floating gate, and a memory array made thereby
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机译:自对准形成具有掩埋源极线和浮栅的浮栅存储单元的半导体存储阵列的方法,以及由此制成的存储阵列
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摘要
A method of forming an array of floating gate memory cells, and an array formed thereby, wherein each memory cell includes a trench formed into a surface of a semiconductor substrate, and spaced apart source and drain regions with a channel region formed therebetween. The source region is formed underneath the trench, and the channel region includes a first portion extending vertically along a sidewall of the trench and a second portion extending horizontally along the substrate surface. An electrically conductive floating gate is disposed in the trench adjacent to and insulated from the channel region first portion. An electrically conductive control gate is disposed over and insulated from the channel region second portion. A block of conductive material has at least a lower portion thereof disposed in the trench adjacent to and insulated from the floating gate, and can be electrically connected to the source region.
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