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Modified strain region of strain reactive slider with implanted ions, electrons or neutral atoms

机译:带有注入离子,电子或中性原子的应变反应滑块的变形应变区域

摘要

At least one modified strain region having a damage depth between 0.1 and 2 microns in a disk drive slider is created by implantation with ions, electrons or neutral atoms. The modified strain region induces a deformation of the disk drive slider. The nature and extent of this deformation is determined by the interaction between the slider and the modified strain region.
机译:通过注入离子,电子或中性原子,在磁盘驱动器滑块中产生至少一个损伤深度在0.1到2微米之间的修正应变区域。改变的应变区域引起磁盘驱动器滑块的变形。这种变形的性质和程度取决于滑块与变形应变区域之间的相互作用。

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