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Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in test
Memory system capable of switching between a reference voltage for normal operation and a reference voltage for burn-in test
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机译:能够在正常操作的参考电压和老化测试的参考电压之间切换的存储系统
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摘要
A memory system that generates a reference voltage unaffected by supply voltage variations and is suitable for performing burn-in test is attainable by employing the following configuration. For example, in an MRAM containing a TMR element (Rij) and an N channel MOS transistor (Mij), as memory element, there is disposed a switching circuit (SW1) capable of switching between the state of applying a reference voltage (VrefN) to a memory element and the state of applying a reference voltage (VrefB) for burn-in test having a larger value than the reference voltage (VrefN) to the memory element. At the time of burn-in test, instead of the reference voltage (VrefN) for normal read operation, the reference voltage (VrefB) for burn-in test can be applied via a sense circuit (SC) to the memory element, by applying mode change signals (MODE1 to MODEn) from the exterior and operating the switching circuit (SW1) via a decode circuit (TD).
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