Method of inspecting surface-emitting semiconductor laser and inspection device for surface-emitting semiconductor laser

摘要

The present invention is a method of inspecting a surface-emitting semiconductor laser in which a resonator is formed in a vertical direction on a semiconductor substrate. The surface-emitting semiconductor laser to be inspected includes a pillar portion in at least part of the resonator, and this pillar portion includes an oxidized current blocking layer. The oxidized current blocking layer includes an oxide aperture, and an oxidized portion formed around the oxide aperture. The surface-emitting semiconductor laser is irradiated with laser light in a direction perpendicular to a surface of the semiconductor substrate from the side on which the pillar portion is disposed, and the shape of the oxide aperture is measured based on the amount of reflected light at the oxidized current blocking layer.