Method of analyzing a relief of failure cell in a memory and memory testing apparatus having a failure relief analyzer using the method

摘要

A method and apparatus for analyzing repair of failure cells in a memory are capable of detecting an address of a failure memory cell in a short time. The memory testing apparatus includes a failure relief analyzer for testing a memory having a plurality of storage areas, counting the number of failure memory cells for each storage area, and reading out the counted number of failure memory cells. The apparatus has an analyzed storage area detector for searching whether a failure memory cell exists and determining whether a failure relief analysis should be performed, a failure line searching apparatus for searching row addresses to detect whether a failure memory cell exists, and an address scanning apparatus whose operation is started when the failure line searching apparatus detects the presence of a failure memory cell, and for detecting a column address in the direction orthogonal to the row address line on which the detected failure memory cell exists.