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Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches
Semiconductor capacitively-coupled NDR device and related applications in high-density high-speed memories and in power switches
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机译:半导体电容耦合NDR器件及其在高密度高速存储器和电源开关中的应用
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摘要
A novel capacitively coupled NDR device can be used to implement a variety of semiconductor circuits, including high-density SRAM cells and power thyristor structures. In one example embodiment, the NDR device is used as a thin vertical PNPN structure with capacitively-coupled gate-assisted turn-off and turn-on mechanisms. An SRAM based on this new device is comparable in cell area, standby current, architecture, speed, and fabrication process to a DRAM of the same capacity. In one embodiment, an NDR-based SRAM cell consists of only two elements, has an 8 F2 footprint, can operate at high speeds and low voltages, has a good noise-margin, and is compatible in fabrication process with main-stream CMOS. This cell significantly reduces standby power consumption compared to other types of NDR-based SRAMs.
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机译:新型电容耦合NDR器件可用于实现各种半导体电路,包括高密度SRAM单元和功率晶闸管结构。在一个示例实施例中,NDR器件用作具有电容耦合的栅极辅助的关断和导通机制的薄垂直PNPN结构。基于这种新器件的SRAM在单元面积,待机电流,架构,速度和制造工艺方面可与相同容量的DRAM相媲美。在一个实施例中,基于NDR的SRAM单元仅由两个元素组成,具有8 F 2 Sup>占位面积,可以在高速和低电压下运行,具有良好的噪声容限,并且兼容主流CMOS的制造工艺。与其他类型的基于NDR的SRAM相比,该单元大大降低了待机功耗。
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