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Surface emitting laser and photodiode, manufacturing method therefor, and optoelectric integrated circuit using the surface emitting laser and the photodiode

机译:表面发射激光器和光电二极管,其制造方法以及使用该表面发射激光器和光电二极管的光电集成电路

摘要

The present invention provides a surface emitting laser and a photodiode which permit secure mounting even in mounting by flip chip bonding, and high-speed modulation. The present invention also provides a manufacturing method therefor and an optoelectric integrated circuit using the surface emitting laser and the photodiode. Semiconductor stacked layers stacked on a semiconductor substrate have a light emitting portion and a reinforcing portion formed with a recessed portion provided therebetween, and a p-type ohmic electrode and an n-type ohmic electrode are formed on the top of the reinforcing portion. The p-type ohmic electrode is electrically connected to a p-type contact layer through a contact hole vertically formed in polyimide buried in the recessed portion to permit supply of a current to the light emitting portion in the thickness direction. The recessed portion has a groove formed to reach the semiconductor substrate, thereby suppressing the parasitic capacity between the p-type ohmic electrode and the n-type ohmic electrode.
机译:本发明提供一种表面发射激光器和光电二极管,即使在通过倒装芯片键合和高速调制进行的安装中,也允许安全地安装。本发明还提供其制造方法以及使用表面发射激光器和光电二极管的光电集成电路。堆叠在半导体衬底上的半导体堆叠层具有发光部分和加强部分,加强部分之间形成有凹入部分,并且在加强部分的顶部上形成有p型欧姆电极和n型欧姆电极。 p型欧姆电极通过垂直地形成在埋入凹部中的聚酰亚胺中的接触孔与p型接触层电连接,以允许在厚度方向上向发光部供应电流。凹部具有形成为到达半导体基板的凹槽,从而抑制了p型欧姆电极和n型欧姆电极之间的寄生电容。

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