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Laser-induced bandgap shifting for photonic device integration
Laser-induced bandgap shifting for photonic device integration
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机译:激光诱导的带隙位移用于光子器件集成
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摘要
To shift the bandgap of a quantum well microstructure, the surface of the microstructure is selectively irradiated in a pattern with ultra violet radiation to induce alteration of a near-surface region of said microstructure. Subsequently the microstructure is annealed to induce quantum well intermixing and thereby cause a bandgap shift dependent on said ultra violet radiation.
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