首页>
外国专利>
Method of predicting reliabilty of oxide-nitride-oxide based non-volatile memory
Method of predicting reliabilty of oxide-nitride-oxide based non-volatile memory
展开▼
机译:基于氧化物-氮化物-氧化物的非易失性存储器的可靠性预测方法
展开▼
页面导航
摘要
著录项
相似文献
摘要
A method and computer aided system for predicting the reliability of oxide-nitride-oxide (ONO) based non-volatile memory. ONO memory devices may be programmed. Margin voltages may be recorded initially, and during baking at 100 degrees C. and 300 degrees C. From this data, constants and activation energy may be determined through a first formula. Frenkel-Poole activation energy may be determined. Through the use of a second formula, decay time of the information stored in the ONO memory may be predicted from the activation energy. The first formula may also be used to predict the decay time. The two decay time predictions may be compared to establish confidence. In this manner, data retention of an ONO memory may be reliably predicted.
展开▼