首页> 外国专利> RAPID CYCLE CHAMBER HAVING A TOP VENT WITH NITROGEN PURGE

RAPID CYCLE CHAMBER HAVING A TOP VENT WITH NITROGEN PURGE

机译:快速循环室的顶部排气口带有氮气吹扫装置

摘要

RAPID CYCLE CHAMBER HAVING A TOP VENT WITH NITROGEN PURGEAbstract: A chamber (132) for transitioning a semiconductor substrate between modules operating at different pressures is provided. The chamber includes a base defining an outlet (136). The outlet permits removal of an atmosphere within the chamber to create a vacuum. A substrate support for supporting a semiconductor substrate (122) within the chamber is included. A chamber top having an inlet (138) is included. The inlet is configured to allow for the introduction of a gas into the chamber to displace moisture in a region defined above the substrate support. Sidewalls extending from the base to the chamber top are included. The sidewalls include access ports (146) for entry and exit of a semiconductor substrate from the chamber. A method for conditioning an environment above a region of a semiconductor substrate within a pressure varying interface is also provided.
机译:快速循环室的顶部排气口带有氮气吹扫装置抽象:用于在不同压力下工作的模块之间过渡半导体衬底的腔室(132)是提供。腔室包括限定出口(136)的底部。出口允许去除室内的气氛创造真空。包括用于在腔室内支撑半导体衬底(122)的衬底支撑件。一个房间包括具有入口(138)的顶部。入口配置为允许将气体引入腔室以置换在衬底支撑物上方限定的区域中的水分。包括从底部延伸到腔室顶部的侧壁。的侧壁包括用于使半导体衬底从腔室进入和离开腔室的进入端口(146)。调理方法还提供了变压界面内的半导体衬底的区域上方的环境。

著录项

  • 公开/公告号SG102295A1

    专利类型

  • 公开/公告日2004-04-29

    原文格式PDF

  • 申请/专利权人 LAM RESEARCH CORPORATION;

    申请/专利号SG2004003026

  • 发明设计人 JACOB DAVID E.;HALSEY HARLAN I.;

    申请日2002-07-30

  • 分类号H01L21/69;H01L21/00;H01L21/469;H01L21/31;

  • 国家 SG

  • 入库时间 2022-08-21 23:07:59

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