首页> 外国专利> COMPOSITION AND METHOD OF SPROUT INHIBITION IN POTATOES

COMPOSITION AND METHOD OF SPROUT INHIBITION IN POTATOES

机译:马铃薯中芽萌芽的组成和方法

摘要

Compositions which include a mixture of CIPC and at least one substitutednaphthalene are disclosed. The compositions of the presentinvention are adapted for inhibiting sprout growth in tubers. When so used,the preferred substituted naphthalene in the compositions of thepresent invention are dimethylnaphthalene (DMN) and diisopropylnaphthalene(DIPN). A method of applying a CIPC/naphthalene mixtureis also disclosed. In a preferred embodiment of the method, tubers to beplaced in storage are treated with a composition of C1PC and asubstituted naphthalene utilizing thermal fogging techniques, with the averageeffective residue of CIPC on the tubers of from approximately21 ppm to 2.5 ppm. In the preferred embodiment, the weight ratio of averageeffective residue of CIPC to the substituted naphthalene isfrom approximately 1:1 to 1:4. In a most preferred embodiment, a compositionincluding CIPC and either DIPN or DMN is applied totubers utilizing thermal fogging techniques to obtain an average effectiveresidue on the outer surface of the tubers of approximately 14ppm C1PC and 14 ppm of the DIPN or DMN.
机译:包含CIPC和至少一种取代基的混合物的组合物公开了萘。本发明的组成本发明适于抑制块茎中的新芽生长。这么用的时候在该组合物中优选的取代萘本发明是二甲基萘(DMN)和二异丙基萘(DIPN)。涂覆CIPC /萘混合物的方法还公开了。在该方法的优选实施方式中,块茎为存放于仓库的物品用C1PC组成和利用热雾化技术取代萘,平均CIPC在块茎上的有效残留量约为21 ppm至2.5 ppm。在优选的实施方案中,平均重量比为CIPC对取代萘的有效残基为从大约1:1到1:4。在最优选的实施方案中,组合物包括CIPC和DIPN或DMN应用于利用热雾技术获得平均有效块茎块茎外表面残留约14种ppm C1PC和14 ppm DIPN或DMN。

著录项

  • 公开/公告号CA2255794C

    专利类型

  • 公开/公告日2004-01-20

    原文格式PDF

  • 申请/专利权人 PLATTE CHEMICAL COMPANY;

    申请/专利号CA19972255794

  • 发明设计人 RIGGLE BRUCE D.;SCHAFER RONALD K.;

    申请日1997-01-27

  • 分类号A01N47/20;A01N27/00;

  • 国家 CA

  • 入库时间 2022-08-21 23:05:05

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