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SEMICONDUCTOR LASER WITH DISORDERED AND NON-DISORDERED QUANTUM WELL REGIONS
SEMICONDUCTOR LASER WITH DISORDERED AND NON-DISORDERED QUANTUM WELL REGIONS
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机译:量子阱区无序和无序的半导体激光器
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摘要
In a semiconductor laser, non-disordered quantum well active region functions as a lasing region. Surrounding the non-disordered quantum well active region is a disordered quantum well active region which prevents diffusion of injected carriers from the non-disordered quantum well active region or provides a lateral heterobarrier. The disordered quantum well active region is formed by rapid thermal annealing in which defects from one or two InP defect layers diffuse into the parts of the quantum well active region to be disordered.
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