Process for etching a polycristalline Si1-xGex layer or stacked layers of polycristalline Si1-xGex and Si, and application to electronic devices

摘要

the etching process of a layer of polycrystalline si1 - xgex or a stack of a layer of polycrystalline si1 - xgex and a polycrystalline layer on a substrate, and, if applied with a mask to the surface of inorganic material, includes a step of etching, anisotr cfs, the layer of pile, using the mask.using a high density plasma of a gaseous mixture of gases consisting of chlorine (cl2), nitrogen (n2) or ammonia (nh3), which is a mixture of nitrogen and ammonia.;application: manufacture of grid structures for cmos devices.