SEMICONDUCTOR5 STORAGE DEVICE AND SEMICONDUCTOR STORAGE DEVICE READ OUT METHOD

摘要

The circuit area is reduced and data is output always at a high speed. An auxiliary cell array (2) is arranged to be connected to a word line of the side where a memory cell array (1) increases its bit line address. The auxiliary cell array (2) stores data of memory cells of the first bit line address (Y0) of the next work line address to a predetermined bit line address. When a plurality of data are simultaneously to be read out from the last bit line address (Yn) of the memory cell array (1) to the first bit line address (Y0) of the next word line address, a Y-address driver (4) reads out data from the auxiliary cell array (2) continuous to the last bit line address (Yn).