A kind of manufacture attenuating extreme ultraviolet method (EUV) phase shift mask (60) may include providing multilayer mirror (34) in IC substrate (32) or mask plate, it provides buffer layer (36), in the multilayer eyeglass (34), a kind of dual element material layer (38 is provided, 40) buffer layer (36) on, and selectively the IC substrate (66) (60) 0 of growth characteristics or blank mask utilize photon assisted chemical vapor deposition (CVD) process when deposition dual element layer (60) 1, (60) 2.
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