首页> 外国专利> SUPERCONDUCTING THIN FILM HAVING COLUMNAR PIN RETAINING CENTER USING NANOamp;minus;DOTS

SUPERCONDUCTING THIN FILM HAVING COLUMNAR PIN RETAINING CENTER USING NANOamp;minus;DOTS

机译:使用纳米和负点的超导薄膜具有柱销固定中心

摘要

A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed. The superconducting thin film (5) is prepared by depositing the material other than the superconducting material on the substrate (2) while controlling the substrate (2) temperature, and the film thickness of the material deposited so to coagulate the deposited material to form the nano dots (3), and then growing a thin film of the superconducting material (5) on the substrate (2). An improved superconducting thin film is thus provided which regardless of its type is at least ten times higher in critical current density than an exiting superconducting thin film, and which can also be manufactured at a low cost. And, being large in critical superconducting current density and critical superconducting magnetic field, it is advantageously applicable to the technical fields of cryogenic electronics and microwaves.
机译:公开了一种超导薄膜,其具有利用纳米点的柱状钉扎中心,并且包括纳米点(3),所述纳米点(3)呈岛状地形成在基板(2)上并且呈三维形状,并且由除超导材料之外的材料构成,并且还包括与形成衬底的材料相比,由超导材料构成并分别在纳米点(3)上生长的柱状缺陷(4),在所述柱状缺陷(4)上形成的晶格缺陷(6)和在基板上除形成所述柱状缺陷的区域以外的区域中形成的超导材料(5)的薄膜。通过在控制基板(2)温度的同时在基板(2)上沉积除超导材料之外的材料来制备超导薄膜(5),并沉积所沉积材料的膜厚度以使所沉积的材料凝结以形成超导薄膜(5)。纳米点(3),然后在基板(2)上生长超导材料(5)的薄膜。因此,提供了一种改进的超导薄膜,无论其类型如何,其临界电流密度都比现有的超导薄膜高至少十倍,并且还可以低成本制造。并且,由于临界超导电流密度和临界超导磁场较大,因此有利地适用于低温电子学和微波的技术领域。

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