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Superconducting thin film having columnar pin retaining center using nano-dots

机译:具有使用纳米点的圆柱状销保持中心的超导薄膜

摘要

A superconducting thin film is disclosed having columnar pinning centers utilizing nano dots, and comprising nano dots (3) which are formed insularly on a substrate (2) and three-dimensionally in shape and composed of a material other than a superconducting material and also other than a material of which the substrate is formed, columnar defects (4) composed of the superconducting material and grown on the nano dots (3), respectively, a lattice defect (6) formed on a said columnar defect (4), and a thin film of the superconducting material (5) formed in those areas on the substrate which are other than those where said columnar defects are formed. The superconducting thin film is prepared by depositing the material other than the superconducting material on the substrate (2) while controlling the substrate temperature, the rate of deposition of the material and the film thickness of the material deposited so to coagulate the deposited material to form the nano dots (3), and then growing a thin film of the superconducting material (5) on the substrate (2). An improved superconducting this film is thus provided which regardless of its type is at least ten times higher in critical current density than an exiting superconducting thin film, and which can also be manufactured at a low cost. And, being large in critical superconducting current density and critical superconducting magnetic field, it is advantageously applicable to the technical fields of cryogenic electronics and microwaves.
机译:公开了一种超导薄膜,该薄膜具有利用纳米点的柱状钉扎中心,并且包括纳米点( 3 ),所述纳米点在衬底( 2 )上呈岛状形成,并在三维方向上形成。形状且由除超导材料以外的材料以及形成基板的材料以外的材料组成,由超导材料构成并生长在纳米点( 4 ) > 3 ),在所述柱状缺陷( 4 )上形成的晶格缺陷( 6 )和超导材料的薄膜(< B> 5 )形成在基板上除形成所述柱状缺陷的区域以外的区域中。通过在控制基板温度,材料的沉积速率和沉积的材料的膜厚度的同时,在基板上沉积除超导材料之外的材料( 2 )来制备超导薄膜。凝结沉积的材料以形成纳米点( 3 ),然后在基板( 2 < / B>)。因此,提供了一种改进的超导薄膜,无论其类型如何,其临界电流密度都比现有的超导薄膜高至少十倍,并且还可以低成本制造。并且,由于临界超导电流密度和临界超导磁场较大,因此有利地适用于低温电子学和微波的技术领域。

著录项

  • 公开/公告号US2004235670A1

    专利类型

  • 公开/公告日2004-11-25

    原文格式PDF

  • 申请/专利权人 CRISAN IOAN ADRIAN;IHARA HIDEO;

    申请/专利号US20040480942

  • 发明设计人 HIDEO IHARA;IOAN ADRIAN CRISAN;

    申请日2004-05-12

  • 分类号H01B1/00;

  • 国家 US

  • 入库时间 2022-08-21 22:24:25

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