Method of fabricating semiconductor device with ultra-shallow super-steep-retrograde epi-channel by decaborane doping

摘要

PURPOSE: A method for manufacturing a semiconductor device with an ultra-shallow super-steep-retrograde epi-channel is provided to improve the productivity of ultra low energy implantation by using decaborane doping. CONSTITUTION: A channel doping layer(35a) is formed in a semiconductor substrate(31) by implanting decaborane. An epitaxial layer(36) is formed on the channel doping layer(35a). A gate oxide layer(37) and a gate electrode(38) are sequentially formed on the epitaxial layer(36). An SDE(Source/Drain Extension) region(39) is formed in the substrate to align edges of the gate electrode(38), wherein the depth of the SDE region(39) is shallower than that of the channel doping layer(35a). A spacer(40) is formed at both sidewalls of the gate electrode. A source/drain region(41) having a relatively deep depth compared to the channel doping layer, is then formed to align edges of the spacer.