Power Semiconductor device having high breakdown voltage low on-resistance and small switching loss

摘要

PURPOSE: A power semiconductor device with high breakdown voltage, low on-resistance and small switching loss is provided to prevent an electric field from being concentrated on both end corners of a body region by forming a body region of a stripe type and by connecting the upper and lower portion of the body region to a frame region. CONSTITUTION: A high density drain region(302) is of the first conductivity type. A low density drift region(304) of the first conductivity type is formed on the drain region. A high density drift region(306) of the first conductivity type is formed on the low density drift region. The body region(308) of the second conductivity type is formed in a predetermined region on the high density drift region. A high density source region of the first conductivity type is formed in a predetermined area on the body region. A gate insulation layer(316) having a stripe type in the same direction as the body region is formed on a channel region of the body region and on the high density drift region between the body regions. A gate electrode(318) is formed on the gate insulation layer. A source electrode(320) is electrically connected to the source region. A drain electrode is electrically connected to the drain region.