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METHOD FOR FABRICATING AN ELECTRICALLY ADDRESSABLE SILICON-ON-SAPPHIRE LIGHT VALVE

机译:制造可电寻址的硅上硅光阀的方法

摘要

A method for fabricating a monolithically integrated liquid crystal array display and control circuitry on a silicon-on-sapphire structure comprises the steps of: a) forming an epitaxial silicon layer on a sapphire substrate to create a silicon-on-sapphire structure; b) ion implanting the epitaxial silicon layer; c) annealing the silicon-on sapphire structure; d) oxidizing the epitaxial silicon layer to form a silicon dioxide layer from portion of the epitaxial silicon layer so that a thinned epitaxial silicon layer remains; e) removing the silicon dioxide layer to expose the thinned epitaxial silicon layer; f) fabricating an array of pixels from the thinned epitaxial silicon layer; and g) fabricating integrated circuitry from the thinned epitaxial silicon layer which is operably coupled to modulate the pixels. The thinned epitaxial silicon supports the fabrication of device quality circuitry which is used to control the operation of the pixels.
机译:一种在蓝宝石上的硅结构上制造单片集成液晶阵列显示和控制电路的方法,包括以下步骤:a)在蓝宝石衬底上形成外延硅层,以产生蓝宝石上的硅结构; b)离子注入外延硅层; c)对蓝宝石上的硅结构进行退火; d)氧化外延硅层,从外延硅层的一部分形成二氧化硅层,从而保留薄的外延硅层; e)去除二氧化硅层以暴露出变薄的外延硅层; f)由减薄的外延硅层制造像素阵列; g)由薄化的外延硅层制造集成电路,该薄化的外延硅层可操作地耦合以调制像素。变薄的外延硅支持器件质量电路的制造,该器件质量电路用于控制像素的操作。

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