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Band-Gap Reference Generator for low voltage operation

机译:带隙基准电压源,用于低压运行

摘要

PURPOSE: A low voltage band gap reference generator is provided to drastically reduce the area occupied by the parasitic bipolar transistor in the band gap reference generator circuit. CONSTITUTION: A low voltage band gap reference generator includes a differential amplifying terminal circuit, a bias circuit, a plurality of current mirror circuit, a plurality of parasitic bipolar circuits and a resistor. The differential amplifying terminal circuit has a negative feed back loop. The bias circuit preforms the bias to the current source circuit in the differential amplifying terminal circuit. The plurality of parasitic bipolar circuits is generated during the CMOS manufacturing process connected to the current mirror circuit. And, the resistor is connected to one of the bipolar transistors. The reference voltage is generated by using the voltage between the resistors.
机译:目的:提供了一个低压带隙基准发生器,以大大减少带隙基准发生器电路中寄生双极晶体管所占的面积。组成:一种低压带隙基准发生器,包括差分放大端子电路,偏置电路,多个电流镜电路,多个寄生双极电路和一个电阻器。差分放大端子电路具有负反馈回路。所述偏置电路将所述偏置预施加到所述差分放大端子电路中的电流源电路。在连接到电流镜电路的CMOS制造过程中产生多个寄生双极电路。并且,电阻器连接到双极晶体管之一。参考电压是通过电阻之间的电压产生的。

著录项

  • 公开/公告号KR20040004023A

    专利类型

  • 公开/公告日2004-01-13

    原文格式PDF

  • 申请/专利权人 KIM YOUNG HEE;

    申请/专利号KR20020041046

  • 发明设计人 KIM YOUNG HEE;LIM GYU HO;YOO SEONG HAN;

    申请日2002-07-03

  • 分类号G05F1/10;

  • 国家 KR

  • 入库时间 2022-08-21 22:50:03

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