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Improved EPD system and plasma etching apparatus equipped with the same

机译:改进的EPD系统和配备该系统的等离子体蚀刻设备

摘要

PURPOSE: An improved EPD(End Pointer Detector) system and a plasma etch system including the same are provided to enhance the productivity by detecting accurately an end point and lengthening a lifetime of the EPD system. CONSTITUTION: An improved EPD(End Pointer Detector) system includes a view port(300) having a recess for transmitting the light, an optical cable(310) for transmitting the light, and an analyzer(400) analyzing a wavelength of the light and detecting an end point. A plasma etch system includes a process chamber, a supply unit(215), an exhaust unit, a plasma generator, a window, the view port(300), the optical cable(310), and the analyzer(400). The supply unit(215) supplies the reaction gas into the process chamber. The plasma generator is used for activating the reaction gas. The window is connected to one side of the process chamber. The view port(300) is installed at the window.
机译:目的:提供一种改进的EPD(终点指示器检测器)系统和包括该系统的等离子体蚀刻系统,以通过准确地检测终点并延长EPD系统的寿命来提高生产率。构成:一种改进的EPD(终点指示器检测器)系统,包括一个观察端口(300),该观察端口(300)具有一个用于透射光的凹槽,一个用于传输光的光缆(310),以及一个分析器(400),用于分析光的波长和检测终点。等离子蚀刻系统包括处理室,供应单元(215),排气单元,等离子发生器,窗口,观察口(300),光缆(310)和分析仪(400)。供给单元(215)将反应气体供给至处理室。等离子体发生器用于活化反应气体。窗口连接到处理室的一侧。观察端口(300)安装在窗口中。

著录项

  • 公开/公告号KR20040009959A

    专利类型

  • 公开/公告日2004-01-31

    原文格式PDF

  • 申请/专利权人 SAMSUNG ELECTRONICS CO. LTD.;

    申请/专利号KR20020044344

  • 发明设计人 BAEK JEONG HWAN;

    申请日2002-07-26

  • 分类号H01L21/3065;

  • 国家 KR

  • 入库时间 2022-08-21 22:49:55

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