IMPROVED PHOTORESIST INHIBITING GENERATION OF SCUM OR RESIDUE BY REMOVING OR REDUCING PHOTOINITIATOR OR CROSSLINKING AGENT AND PREPARATION METHOD OF PATTERN USING THE PHOTORESIST

摘要

PURPOSE: A photoresist and a method for forming a pattern by using the photoresist are provided, to inhibit the generation of scum or residue by removing or reducing a photoinitiator or a crosslinking agent, to reduce the amount of a photoinitiator and to reduce the amount of the unsaturated monomer and oligomer of α,β-ethylene. CONSTITUTION: The photoresist comprises a hydrophilic compound generating a free radical when exposed to actinic radiation. Preferably the hydrophilic compound is derived from the Michael addition reaction of at least one diketone or acetoacetate derived from a reactive donor compound and at least two polyfunctional acrylate receptor compound. Preferably the hydrophilic compound is an oligomer represented by the formula 1, wherein m is an integer of 1 or more; R' and R'' are identical or different each other and are a substituted or unsubstituted C6-C14 aryl group, a linear or branched C1-C15 alkyl group, a linear or branched C2-C15 hydroxyalkyl group, a substituted or unsubstituted C5-C14 heterocyclic aryl group (wherein heteroatom is S, N or O), or a linear or branched C1-C5 aminylalkyl group; or R'' comprises the above R' and -O-R''; and R is a group derived from an acid-reactive monomer, a non-acid-reactive monomer, an alkylene oxide, a polyester, a urethane oligomer or their mixtures.