DIELECTRIC FILM WITH IMPROVED QUALITY AND FORMING METHOD THEREOF, AND SEMICONDUCTOR DEVICE USING DIELECTRIC FILM AND MANUFACTURING METHOD THEREOF

摘要

PURPOSE: A dielectric film and a forming method thereof, and a semiconductor device using the dielectric film and a manufacturing method thereof are provided to improve the quality of the dielectric film by using oxygen atoms or nitrogen atoms of high density. CONSTITUTION: A dielectric film is formed directly or indirectly on a minimal portion of a glass substrate or a plastic substrate by using a plasma generator(10). The dielectric film contains oxide silicon at a desired portion in a thickness direction. The oxide silicon has a composition rate of (1:1.94) to (1:2) between silicon and oxygen.