CLEANING SOLUTION AND CLEANING METHOD USING THE SAME TO PERFORM MINIMAL MACHINING ON SEMICONDUCTOR SUBSTRATE WITHOUT CORRODING INTERCONNECTION MATERIAL

摘要

PURPOSE: A cleaning solution is provided to perform a minimal machining on a semiconductor substrate without corroding an interconnection material by easily eliminating etching residue on the semiconductor substrate within a short interval of time. CONSTITUTION: A cleaning solution for the semiconductor substrate contains an oxide agent, an acid and fluorine compound. Basic compound is added to water so that the pH(hydrogen ion concentration) of the wafer becomes 3-10, and the density of the water is not lower than 80 weight percent. The weight ratio of an acid to an oxide agent in the cleaning solution is 0.1-1000.