METHOD OF FORMING METAL LAYER FOR SEMICONDUCTOR WIRING TO MINIMIZE INCREASE OF RESISTIVITY OF METAL LAYER DUE TO ADDITION AGENT

摘要

PURPOSE: A method of forming a metal layer for semiconductor wiring is provided to minimize increase of resistivity of a metal layer due to an addition agent in an electroplating process. CONSTITUTION: A diffusion barrier(120) is formed on a semiconductor substrate. A seed layer(140) is formed on the diffusion barrier. The semiconductor substrate is dipped into a copper electroplating solution including an addition agent. A copper layer is formed on the entire surface of the semiconductor substrate by applying the reductive electric potential to the copper electroplating solution. The semiconductor substrate is dipped into a copper electroplating solution without an addition agent. The copper layer is formed on the entire surface of the semiconductor substrate by applying the reductive electric potential to the copper electroplating solution. The resistivity of the semiconductor substrate is reduced by performing a thermal process.