METHOD FOR FABRICATING SEMICONDUCTOR DEVICE, SEMICONDUCTOR DEVICE, CIRCUIT BOARD AND ELECTRONIC INSTRUMENT TO PREVENT SIGNAL LINE AND GROUND FROM BEING SHORT-CIRCUITED AND AVOID CONNECTION FAILURE OF ELECTRODES IN STACK PROCESS

摘要

PURPOSE: A method for fabricating a semiconductor device is provided to prevent a bonded member and the back surface of a semiconductor substrate from being short-circulated even if the bonded member between electrodes is varied in stacking a semiconductor device by forming the second insulation layer in the periphery of the back surface of the semiconductor substrate while exposing the end part of the electrode to the back surface of the semiconductor substrate. CONSTITUTION: A concave part is formed from the active surface of the semiconductor substrate(10) with an integrated circuit to the inside of the semiconductor substrate. The first insulation layer(22) is formed on the inner surface of the concave part. The inside of the first insulation layer is filled with a conductive material to form an electrode(34). The back surface of the semiconductor substrate is etched to expose the end part of the first insulation layer. The second insulation layer(26) is formed on the back surface of the semiconductor substrate. The first and second insulation layers at the end part of the electrode is eliminated to expose the end part of the electrode.