MAGNETORESISTANCE ELEMENT HAVING SMALL AND STABLE BIAS MAGNETIC FIELD WITHOUT REGARD TO DEVICE SIZE VARIATION

摘要

PURPOSE: A magnetoresistance element having a small and stable bias magnetic field without regard to device size variation is provided, which adjusts a bias point easily even when a size of a unit cell is under micrometer. CONSTITUTION: According to the spin-valve type magnetoresistive including a free layer and a pinned layer which are formed on a substrate and are separated by a non-magnetic interface layer, the free layer is formed on the substrate. The interface layer is formed with a non-magnetic conductive material formed on the free layer. The pinned layer comprises the third and the second and the first ferromagnetic layer, and the second anti-parallel coupling layer separating the third ferromagnetic layer from the second ferromagnetic layer, and the first anti-parallel coupling layer separating the second ferromagnetic layer from the first ferromagnetic layer. And an antiferromagnetic layer is formed on the first ferromagnetic layer of the pinned layer.