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CIRCUIT FOR GENERATING INITIALIZATION SIGNAL OF SEMICONDUCTOR MEMORY DEVICE, ESPECIALLY PREVENTING UNNECESSARY NOISE

机译:产生半导体存储设备初始化信号的电路,特别是防止不必要的噪声

摘要

PURPOSE: A circuit for generating an initialization signal of a semiconductor memory device is provided to perform initialization under an initial state when a command is not applied. CONSTITUTION: An inverter(20) receives a power up signal(pwrup), and an inverter(21) receives a register setting command signal(rstcmd). A NAND gate(22) receives outputs of the two inverters(20,21). An inverter(23) receives an initialization section setting signal(ckelow). An inverter(24) receives an output of the inverter(23). An NOR gate(25) receives an output of the NAND gate(22) and an output of the inverter(24). And an inverter(26) outputs an initialization signal(rstreg) by receiving an output of the NOR gate(25).
机译:目的:提供一种用于产生半导体存储器件的初始化信号的电路,以在不施加命令时在初始状态下执行初始化。组成:逆变器(20)接收上电信号(pwrup),逆变器(21)接收寄存器设置命令信号(rstcmd)。一个“与非”门(22)接收两个反相器(20,21)的输出。逆变器(23)接收初始化区间设定信号(ckelow)。逆变器(24)接收逆变器(23)的输出。或非门(25)接收与非门(22)的输出和反相器(24)的输出。反相器(26)通过接收或非门(25)的输出来输出初始化信号(rstreg)。

著录项

  • 公开/公告号KR20040093804A

    专利类型

  • 公开/公告日2004-11-09

    原文格式PDF

  • 申请/专利权人 HYNIX SEMICONDUCTOR INC.;

    申请/专利号KR20030027638

  • 发明设计人 KIM TAEK SEUNG;

    申请日2003-04-30

  • 分类号G11C7/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:38

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