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METHOD FOR PRODUCING SEMICONDUCTOR COMPONENT WITH LOW CONTACT RESISTENCE TO HIGHLY DOPED REGIONS
METHOD FOR PRODUCING SEMICONDUCTOR COMPONENT WITH LOW CONTACT RESISTENCE TO HIGHLY DOPED REGIONS
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机译:在高掺杂区域中制备低接触电阻的半导体组件的方法
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摘要
A method for fabricating a semiconductor component having a low contact resistance with respect to heavily doped or siliconized zones in a semiconductor body. Fluorine ions are implanted into the heavily doped or siliconized zone in the vicinity of a contact hole before a titanium layer is applied to the heavily doped or siliconized zone in the vicinity of the contact hole. As a result of the fluorine, any oxide layers present in the contact hole region can be broken up by less titanium, with the result that a thinner titanium layer is sufficient. In addition, the formation of titanium silicide in the contact hole is promoted.
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