首页> 外国专利> PREPARATION OF ORGANIC AND INORGANIC LAYERS-STRUCTURED ELECTRONIC DEVICE HAVING IMPROVED THERMAL STABILITY

PREPARATION OF ORGANIC AND INORGANIC LAYERS-STRUCTURED ELECTRONIC DEVICE HAVING IMPROVED THERMAL STABILITY

机译:具有改善的热稳定性的有机和无机层结构电子设备的制备

摘要

PURPOSE: A method for fabricating an element having an inorganic layer and an organic layer is provided to improve thermal stability by performing a thermal process for the organic layer having the lowest thermal stability. CONSTITUTION: A substrate including ITO(Indium Tin Oxide) is cleaned. A PEDT-PSS layer of 15 weight percent is coated on an upper surface of the substrate including ITO(Indium Tin Oxide) by using a spin coating method. The PEDT-PSS layer is dried under temperature of 200 degrees centigrade during 10 minutes. An NPB layer is formed on the substrate including the PEDT-PSS layer under normal temperature by using a vapor deposition method. The deposited NPB layer has thickness of 500 angstrom. A thermal process for the NPB layer is performed under the temperature of 110 degrees centigrade during 30 minutes. A BCzVBi layer and an Al/LiF layer are deposited sequentially thereon.
机译:目的:提供一种用于制造具有无机层和有机层的元件的方法,以通过对具有最低热稳定性的有机层进行热处理来提高热稳定性。组成:清洁包括ITO(氧化铟锡)的基板。通过旋涂法将15重量%的PEDT-PSS层涂覆在包括ITO(氧化铟锡)的基板的上表面上。 PEDT-PSS层在200摄氏度的温度下干燥10分钟。在常温下,通过气相沉积法在包括PEDT-PSS层的基板上形成NPB层。沉积的NPB层的厚度为500埃。 NPB层的热处理在30分钟内于110摄氏度的温度下进行。在其上依次沉积BCzVBi层和Al / LiF层。

著录项

  • 公开/公告号KR100428336B1

    专利类型

  • 公开/公告日2004-04-27

    原文格式PDF

  • 申请/专利权人

    申请/专利号KR20010031228

  • 发明设计人 이홍희;김진욱;

    申请日2001-06-04

  • 分类号H05B33/00;

  • 国家 KR

  • 入库时间 2022-08-21 22:47:15

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