method for fabricating bumps in infrared detector and bump structure

摘要

PURPOSE: A method for manufacturing a bump of an infrared sensing device and a bump structure are provided to be capable of reducing the short between the bump and a contact pad, and between the bumps by using the second insulating layer. CONSTITUTION: After forming the first insulating layer(30) on a lower chip, bump connecting metal layers(27,28) are formed on the upper portion of the first insulating layer(30). At this time, one end portions of the bump connecting metal layers are connected with pads(26) of the lower chip, respectively. The second insulating layer(35) is deposited on the entire surface of the resultant structure. After exposing the predetermined contact portions of the bump connecting metal layers by selectively etching the second insulating layer, conductive metal is coated on the resultant structure for forming bumps. Circular bumps(42) are formed on the contact portions by using a lift-off process and a reflow process.