首页> 外国专利> Production of a layer arrangement comprises forming a laterally limited first layer sequence on a first surface region of a substrate and a second laterally limited second layer

Production of a layer arrangement comprises forming a laterally limited first layer sequence on a first surface region of a substrate and a second laterally limited second layer

机译:层布置的生产包括在衬底的第一表面区域和第二横向受限的第二层上形成横向受限的第一层序列

摘要

Production of a layer arrangement comprises forming a laterally limited first layer sequence on a first surface region (201a) of a substrate (201) and a second laterally limited second layer sequence on a second surface region (201b) of the substrate, forming a first sidewall layer (215) of first thickness made from a first electrically insulating material on a partial region of the side walls of the first and second layer sequences, forming a second sidewall layer (217) of second thickness made from a second electrically insulating material on a partial region of the first side wall layers of the first and second layer sequences, and removing the second sidewall layers from the first layer sequence. Independent claims are also included for: (1) layer arrangement produced by the above process; and (2) storage arrangement containing the layer arrangement.
机译:层布置的生产包括在基板(201)的第一表面区域(201a)上形成侧向受限的第一层序列和在基板的第二表面区域(201b)上形成第二侧向受限的第二层序列,形成第一在第一和第二层序列的侧壁的部分区域上由第一电绝缘材料制成的第一厚度的侧壁层(215),在其上形成由第二电绝缘材料制成的第二厚度的第二侧壁层(217)第一和第二层序列的第一侧壁层的部分区域,以及从第一层序列去除第二侧壁层。还包括以下方面的独立权利要求:(1)通过上述方法生产的层布置; (2)包含该层布置的存储布置。

著录项

  • 公开/公告号DE10221884A1

    专利类型

  • 公开/公告日2003-11-27

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2002121884

  • 发明设计人 HAGEMEYER PETER;LANGHEINRICH WOLFRAM;

    申请日2002-05-16

  • 分类号H01L21/8234;H01L21/8247;

  • 国家 DE

  • 入库时间 2022-08-21 22:44:11

相似文献

  • 专利
  • 外文文献
  • 中文文献
获取专利

客服邮箱:kefu@zhangqiaokeyan.com

京公网安备:11010802029741号 ICP备案号:京ICP备15016152号-6 六维联合信息科技 (北京) 有限公司©版权所有
  • 客服微信

  • 服务号