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The method for measuring the intensity profile of an electron beam, in particular of a beam of an electron beam processing device, and / or for measuring an optical system for an electron beam and / or for adjusting an optical system for an electron beam, measuring structure for such a method and electron beam processing apparatus
The method for measuring the intensity profile of an electron beam, in particular of a beam of an electron beam processing device, and / or for measuring an optical system for an electron beam and / or for adjusting an optical system for an electron beam, measuring structure for such a method and electron beam processing apparatus
For measuring the intensity profile of an electron beam, the electron beam (10) on a measuring structure (16), the points (20, 22) with different back-scattering properties, and backscattered electrons (24), which in the case of a scanning of the measuring structure (16) by means of the electron beam (10) by means of a deflection unit (14) are of a sensor ring (26) is measured. The measuring structure (16) is preferably in an electron-beam welder a - and can be extended and consists of a graphite plate (18), from which a tungsten (22) projects perpendicularly.
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