首页> 外国专利> The method for measuring the intensity profile of an electron beam, in particular of a beam of an electron beam processing device, and / or for measuring an optical system for an electron beam and / or for adjusting an optical system for an electron beam, measuring structure for such a method and electron beam processing apparatus

The method for measuring the intensity profile of an electron beam, in particular of a beam of an electron beam processing device, and / or for measuring an optical system for an electron beam and / or for adjusting an optical system for an electron beam, measuring structure for such a method and electron beam processing apparatus

机译:该方法用于测量电子束,特别是电子束处理设备的束的强度分布,和/或用于测量电子束的光学系统和/或用于调节电子束的光学系统,这种方法的结构和电子束处理设备

摘要

For measuring the intensity profile of an electron beam, the electron beam (10) on a measuring structure (16), the points (20, 22) with different back-scattering properties, and backscattered electrons (24), which in the case of a scanning of the measuring structure (16) by means of the electron beam (10) by means of a deflection unit (14) are of a sensor ring (26) is measured. The measuring structure (16) is preferably in an electron-beam welder a - and can be extended and consists of a graphite plate (18), from which a tungsten (22) projects perpendicularly.
机译:为了测量电子束的强度分布,测量结构(16)上的电子束(10),具有不同反向散射特性的点(20、22)和反向散射电子(24)通过电子束(10)借助于偏转单元(14)对传感器环(26)的测量结构(16)的扫描进行测量。测量结构(16)优选在电子束焊机α中,并且可以延伸并且由石墨板(18)组成,钨(22)从该石墨板垂直伸出。

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