Field effect transistor used as a DMOS transistor comprises a source region, a channel region, a drain region, a drift path, and a protection unit for connecting to a unit for influencing the conductivity of the drift path

摘要

Field effect transistor comprises a source region (126a), a channel region (120a), a drain region (114), a drift path (114a) forming the part of the drain region and/or part of the source region, and a protection unit (118) for discharging charges in the transistor and for connecting to a unit (116) for influencing the conductivity of the drift path. An Independent claim is also included for a process for the production of the field effect transistor.