Direct-writing electron beam - lithography method for the production of a two-dimensional structure in the submicrometer range

摘要

Only the characteristic layout data of the borders of a rectangular area are stored in a storage medium for control of an electron beam. The remaining layout data are interpolated in-situ, and the dose modulation of the electron beam when directly writing the rectangular areas in relation to circular areas to be formed is selected so that a specific overexposure leads to exposure of circular areas by the proximity effect.