首页> 外国专利> Process for preparation of Al filled contact holes in a wafer using a vacuum coating useful in semiconductor technology giving quick and cost effective preparation of Al-filled contact holes in a semiconductor wafer

Process for preparation of Al filled contact holes in a wafer using a vacuum coating useful in semiconductor technology giving quick and cost effective preparation of Al-filled contact holes in a semiconductor wafer

机译:使用在半导体技术中有用的真空涂层在晶片中制备铝填充的接触孔的方法,可以快速,经济地制备半导体晶片中的铝填充的接触孔

摘要

Preparation of Al filled contact holes in a wafer using a vacuum coating unit the chambers of which, via a transfer chamber, are coupled to a wafer transfer handler, where after structuring the contact holes by a CVD-process a thin Ti or Ti-Ti nitride layer is separated, the wafer (1) is cooled to ambient temperature, a cold Al-PVD coating is applied in a PVD-Al-ESC-chamber, and the wafer is heated in this chamber, giving a separated hot Al-PVD coating.
机译:使用真空镀膜装置在晶片中制备填充有Al的接触孔,该真空镀膜室的腔室通过传输室与晶片传输处理机相连,在通过CVD工艺构造接触孔之后,可以形成薄的Ti或Ti-Ti分离氮化物层,将晶片(1)冷却至环境温度,在PVD-Al-ESC腔室中施加冷的Al-PVD涂层,然后在该腔室中加热晶片,得到分离的热Al-PVD涂层。

著录项

  • 公开/公告号DE10304103A1

    专利类型

  • 公开/公告日2004-08-26

    原文格式PDF

  • 申请/专利权人 INFINEON TECHNOLOGIES AG;

    申请/专利号DE2003104103

  • 发明设计人 HAHN JENS;SCHMIDBAUER SVEN;

    申请日2003-01-31

  • 分类号H01L21/768;

  • 国家 DE

  • 入库时间 2022-08-21 22:43:33

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