Production of semiconductor structure using anisotropically structured spacer layer with side wall spacers useful in semiconductor technology

摘要

Preparation of a semiconductor structure in which over a semiconductor region with at least one trench (G), a carbon spacer layer (40) is anisotropically structured for removal of the spacer layer from the trench base, so that side wall spacers (40') remain at the trench walls away from the spacer layer (40).