Semiconductor component, especially an LDMOS transistor for use as a large signal amplifier in a base station, has separate planar and non-planar metalizing planes connected via a through contact

摘要

Semiconductor component has a substrate (10) with an active region (12-18) formed in the substrate, a first non-planar metalizing plane (42) that is formed on the substrate and is in contact with the active region, a second planar metalizing plane (30) that is arranged above the substrate and is connected to the first metalizing plane via a through contact (46). The invention also relates to a corresponding amplification circuit with a field effect transistor.