IGBT device with reverse diode function, has thyristor providing reverse-diode function in lateral structure

摘要

An IGBT (2) with a source zone (13) of a first conductivity type and a thyristor (3) with a reverse diode function are integrated in a semiconductor body (1) of the first conductivity type. The IGBT and the thyristor are provided in a lateral structure. The edge region of the device is formed as an anode zone, part of which forms the thyristor with the reverse diode function. An independent claim is included for a method of manufacturing the IGBT device.