首页> 外国专利> Sacrificial layer removal method for semiconductor technology using microchannels formed in structured layer for transporting removal medium to sacrificial layer

Sacrificial layer removal method for semiconductor technology using microchannels formed in structured layer for transporting removal medium to sacrificial layer

机译:用于半导体技术的牺牲层去除方法,其使用在结构化层中形成的微通道将去除介质传输到牺牲层

摘要

The sacrificial layer removal method has microchannels formed in at least one structured layer between a first substrate and a second substrate provided with a sacrificial layer, with full or partial insertion of the substrate arrangement (2) in a housing (1) having an entry opening (10) at one end and an exit opening (11) at the opposite end. A seal is provided between the exit opening and the substrate arrangement and the entry opening is supplied with a sacrificial layer removal medium, the microchannels used for supplying it to the sacrificial layer. An independent claim for a sacrificial layer removal device is also included.
机译:牺牲层去除方法具有在具有牺牲层的第一基板和第二基板之间的至少一个结构化层中形成的微通道,其中基板布置(2)全部或部分插入具有入口的壳体(1)中(10)在一端,出口(11)在另一端。在出口和基板装置之间提供密封,并且向入口供应牺牲层去除介质,用于将其供应到牺牲层的微通道。还包括对牺牲层去除装置的独立权利要求。

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