首页> 外国专利> Photolithographic reduction of lens aberration effects involves carrying out two photolithography transfers of two patterns to wafer while moving plate and wafer parallel to short sides of patterns

Photolithographic reduction of lens aberration effects involves carrying out two photolithography transfers of two patterns to wafer while moving plate and wafer parallel to short sides of patterns

机译:光刻减少透镜像差的影响包括在将板和晶片平行于图形的短边移动的同时对两个图形进行两次光刻转移到晶片

摘要

The method involves providing a photolithography device with a first line plate with a rectangular pattern(s), carrying out a first photolithographic transfer of the pattern to a wafer while moving the plate and wafer parallel to the short pattern sides, replacing the plate with a second with a second rectangular pattern(s) and transferring this to the wafer while moving the plate and wafer in a 90 degree rotation parallel to the short sides. The method involves providing a photolithography device with a first line plate (12) with at least one rectangular pattern, providing a wafer (18) and carrying out a first photolithography to transfer the pattern to the wafer while moving the plate and wafer parallel to the short sides of the pattern, replacing the first plate with a second with at least one second rectangular pattern and transferring this to the wafer while moving the plate and wafer in a plus or minus 90 degree rotation parallel to the short sides of the pattern.
机译:该方法包括向光刻设备提供具有矩形图案的第一线板,在将板和晶片平行于短图案侧移动的同时执行该图案到晶片的第一次光刻转移,用光刻胶代替该板。第二个具有第二个矩形图案,并在平行于短边以90度旋转的方式移动平板和晶圆时,将其转移到晶圆上。该方法包括为光刻设备提供具有至少一个矩形图案的第一线板(12),提供晶片(18)并进行第一光刻以将图案转移到晶片上,同时使该板和晶片平行于晶片移动。图案的短边,用至少一个第二矩形图案的第二个替换第一板,并在平行于图案的短边以正负90度旋转移动板和晶片的同时将其转移到晶片上。

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