Static random access memory component has load transistor in active region lying at an angle to drive transistor active region

摘要

An SRAM component comprises two NMOS access transistors (TA1,TA2) and pairs of NMOS drive transistors (TN1,TN2) and PMOS load transistors (TP1,TP2), each forming inverters which are selectively activated on the operation of the second and first access transistors respectively. An Independent claim is also included for an additional SRAM component as above.