首页> 外国专利> Production of a calcium fluoride single crystal comprises contacting a calcium fluoride charge with a seed crystal, heating to a temperature sufficient to form a melt, pulling a crystal through a temperature gradient zone, tempering

Production of a calcium fluoride single crystal comprises contacting a calcium fluoride charge with a seed crystal, heating to a temperature sufficient to form a melt, pulling a crystal through a temperature gradient zone, tempering

机译:氟化钙单晶的生产包括使氟化钙装料与籽晶接触,加热到足以形成熔体的温度,将晶体拉过温度梯度区,回火

摘要

Production of orientated calcium fluoride single crystal comprises contacting calcium fluoride charge with seed crystal having specific crystallographic orientation, heating charge in first heating zone to form melt, pulling calcium fluoride crystal on seed crystal by gradually moving melt and seed crystal through temperature gradient zone, tempering pulled crystal in second temperature zone. Growth corresponds with seed orientation. Production of an orientated calcium fluoride single crystal comprises contacting a calcium fluoride charge with a seed crystal having a specific crystallographic orientation, heating the calcium fluoride charge in a first heating zone to a temperature which is sufficient to form a melt, pulling a calcium fluoride crystal on the seed crystal by gradually moving the melt and the seed crystal through a temperature gradient zone having an axial temperature gradient in the region of 2-8degreesC/cm, tempering the pulled crystal in a second temperature zone. The growing direction of the calcium fluoride crystal corresponds with the crystallographic orientation of the seed crystal. The first zone has a higher temperature than the second zone and the temperature gradient lies between the two zones. An Independent claim is also included for a calcium fluoride crystal produced by the above process.
机译:定向氟化钙单晶的生产包括:使氟化钙装料与具有特定晶体学取向的籽晶接触;在第一加热区中加热装料以形成熔体;通过使熔体和籽晶逐渐移过温度梯度区,在晶种上牵拉氟化钙晶体;回火在第二温度区拉晶。生长与种子取向相对应。定向氟化钙单晶的生产包括使氟化钙装料与具有特定晶体学取向的晶种接触,在第一加热区中将氟化钙装料加热至足以形成熔体的温度,拉出氟化钙晶体。通过使熔体和晶种逐渐移动经过轴向温度梯度在2-8℃/ cm范围内的温度梯度区域,在第二温度区域中对拉晶进行回火,从而在晶种上形成晶种。氟化钙晶体的生长方向对应于籽晶的晶体学取向。第一区域具有比第二区域更高的温度,并且温度梯度位于两个区域之间。通过上述方法生产的氟化钙晶体也包括独立权利要求。

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