首页> 外国专利> Ultra-fast opto-electronic switching device with high isolation power and wide passband, comprises semiconductor substrate with dielectric layer and modified photoconduction zone

Ultra-fast opto-electronic switching device with high isolation power and wide passband, comprises semiconductor substrate with dielectric layer and modified photoconduction zone

机译:具有高隔离功率和宽通带的超快速光电开关装置,包括具有介电层和修饰的光电导区的半导体衬底

摘要

The optoelectronic switching device comprises two conductor elements (11,12) separated by a gap (13), a dielectric layer (31) of low relative permittivity, a semiconductor substrate layer, and means for illuminating the gap part on a photoconduction zone (16) for modifying the conductivity of the substrate in the zone so to make it locally conducting. The dielectric layer (31) is interrupted above the photoconduction zone and replaced by an air layer (34) allowing to isolate the conductor elements from the substrate in the illumination zone. The air layer (34) is transparent for the optical signal and allows the illumination of the substrate without reflection. The substrate thickness at the level of the photoconduction zone is reduced in order to decrease the stray capacitance linked to the substrate. The reduction of the substrate thickness is implemented on the upper face of the substrate by freed space forming another air layer (36), or on the lower face of the substrate so that the substrate thickness in the conduction zone is substantially equal to the absorption thickness of the substrate for the wavelength corresponding to the illumination. The illumination of the substrate is by an optical signal from a source such as an optical fibre directly illuminating the substrate, or by an optical signal carried by an optical waveguide placed on the upper face of the circuit, or an optical waveguide integrated in the substrate at a depth substantially equal to the absorption thickness, on the upper face or the lower face of the substrate. The optical waveguide distributes the optical signal to several devices. Applications (claimed) of the device (claimed) include the ultrafast sampling of super-high frequency signals propagating in the conducting line, the control of gain of amplifiers, the implementation of phase-shifting circuits, and the implementation of oscillator circuits controlled in frequency.
机译:该光电开关装置包括由间隙(13)隔开的两个导体元件(11,12),低相对介电常数的介电层(31),半导体衬底层以及用于照亮光电导区(16)上的间隙部分的装置。 )以改变该区域中衬底的电导率,从而使其局部导电。介电层(31)在光导区上方被打断,并被空气层(34)代替,从而使导体元件与照明区中的基板隔离。空气层(34)对于光信号是透明的,并允许在不反射的情况下照亮基板。为了减小链接到基板的杂散电容,减小了光电导区域水平处的基板厚度。基板厚度的减小是通过形成另一个空气层(36)的自由空间在基板的上表面上实现的,或者在基板的下表面上实现的,从而使导电区中的基板厚度基本上等于吸收厚度基板对应于照明的波长的波长。基板的照明是通过来自光源(例如直接照亮基板的光纤)的光信号,或者是由放置在电路上表面的光波导或集成在基板中的光波导携带的光信号进行的在衬底的上表面或下表面上的深度基本上等于吸收厚度。光波导将光信号分配到几个设备。该设备(要求保护)的应用(要求保护)包括对在导线中传播的超高频信号的超快采样,放大器增益的控制,移相电路的实现以及频率受控的振荡器电路的实现。

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