Method and device for heat treatment of semiconductor wafers for detaching layers, comprises steps with input of basic heat balance and additional heat balance

摘要

The method for the heat treatment of one or more wafers (T) for detaching layers at the level of fragility zones comprises two steps: (i) bringing the wafers to a basic heat balance which is slightly below the balance necessary for the detachment, and (ii) bringing the wafers at least locally to an additional heat balance in the region of fragility zones so to initial the detachment of layers. In the course of the first step, the heat is uniformly distributed in the fragility zones. In bringing the wafers to global heat balance the heating components (140) are controlled selectively. The wafers are positioned vertically, or horizontally, in a chamber (100). The two steps of heating are carried out in two phases, or simultaneously. In the second embodiment, the heating is by controlling the circulation of a heat-conducting gas on different regions of the surface of wafer, by use of a shutter in the form of a barrier, or in the form of a perforated chamber. The device (claimed) for the heat treatment of wafers according to the method (claimed) comprises components for heating designed to cover different parts of each wafer, means for selective control of heating power and means for controlling the distribution of heat-conducting gas. The heating components are of generally circular form, and surround the reception space of wafers. The heating components are extended in the same plane, in a concentric manner.