PRETREATMENT CONDITION DETERMINATION METHOD FOR HEAT TREATMENT FURNACE, PRETREATMENT METHOD FOR HEAT TREATMENT FURNACE, HEAT TREATMENT DEVICE, AND PRODUCTION METHOD AND PRODUCTION DEVICE FOR HEAT-TREATED SEMICONDUCTOR WAFER

摘要

Provided is a pretreatment condition determination method for a heat treatment furnace, the pretreatment involving heating the interior of the heat treatment furnace while supplying a gas thereto, and the pretreatment condition determination method for the heat treatment furnace including: setting a plurality of combination candidates of supply gas types and heating temperatures; assigning to each combination candidate a score determined in accordance with the type of metal specified as a target of removal by the pretreatment; and using the assigned scores as an index to determine a supply gas type and heating temperature combination to be adopted as a pretreatment condition from among the plurality of candidates.