首页> 外国专利> SUBSTRATE, ELECTRIC CONDUCTIVE SUBSTRATE, FINELY STRUCTURED SUBSTRATE, ORGANIC ELECTRIC FIELD EFFECTIVE TRANSISTOR AND MANUFACTURING METHOD FOR THEM

SUBSTRATE, ELECTRIC CONDUCTIVE SUBSTRATE, FINELY STRUCTURED SUBSTRATE, ORGANIC ELECTRIC FIELD EFFECTIVE TRANSISTOR AND MANUFACTURING METHOD FOR THEM

机译:基质,导电基质,精细结构的基质,有机电场有效晶体管及其制造方法

摘要

PPROBLEM TO BE SOLVED: To provide a substrate suitable for forming an electrical conductive layer with a high smoothness, a high flatness and a low enough resistance from even a dispersion or a paste of electrically conductive fine particles, an electrically conductive substrate and an electrical field effective transistor. PSOLUTION: The substrate providing an organic resin layer 2 on a base material 1 having a surface roughness of the base material 1 from 1.2 nm to 5 nm, a maximum height of the surface irregularity of 0.1 m and 1.0 m, the surface roughness of the organic resin layer 2 of 1 nm, the maximum height of the surface roughness of 30 nm, the substrate having a hydrophilic domain 8 formed by applying a UV irradiation, an electron beam irradiation, a corona discharging treatment or an ozone treatment on at least a part of the surface of the organic resin layer 2. An electrically conductive substrate with an electrically conductive layer 7 formed on a hydrophilic domain 8 of at least a part of the organic resin surface of the substrate and an organic electric field effective transistor using it. PCOPYRIGHT: (C)2006,JPO&NCIPI
机译:

要解决的问题:提供一种基材,该基材即使由导电性细粒的分散体或糊剂形成,也具有高平滑度,高平坦度和足够低的电阻的导电层,导电性基材和电场有效晶体管。

解决方案:在基材1上提供有机树脂层2的基材,基材1的表面粗糙度为1.2nm至5nm,表面凹凸的最大高度为0.1m和1.0m,表面有机树脂层2的粗糙度为1nm,表面粗糙度的最大高度为30nm,具有通过在其上施加UV照射,电子束照射,电晕放电处理或臭氧处理而形成的亲水性区域8的基板。至少一部分有机树脂层2的表面。一种导电基板,具有形成在该基板的至少一部分有机树脂表面的亲水域8上的导电层7和有机电场有效晶体管。使用它。

版权:(C)2006,JPO&NCIPI

著录项

  • 公开/公告号JP2005289054A

    专利类型

  • 公开/公告日2005-10-20

    原文格式PDF

  • 申请/专利权人 CANON INC;

    申请/专利号JP20050064562

  • 申请日2005-03-08

  • 分类号B32B27/00;B05D1/38;B05D3/06;H01L21/336;H01L29/786;H01L51/00;

  • 国家 JP

  • 入库时间 2022-08-21 22:37:35

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